Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs — Standard ion implantation and bottom-gate design fix leakage and voltage drift

Tom's Hardware
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Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs — Standard ion implantation and bottom-gate design fix leakage and voltage drift
Read the full story at Tom's HardwareOriginal

A research team at Kyoto University has built a silicon carbide transistor that operates at 600°C (873 K) using ion implantation.

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